Mitsubishi CM1000DXL-24S New Stock

Mitsubishi CM1000DXL-24S New Stock
Mitsubishi CM1000DXL-24S New Stock
Mitsubishi CM1000DXL-24S New Stock
Mitsubishi CM1000DXL-24S New Stock
Mitsubishi CM1000DXL-24S New Stock
Mitsubishi CM1000DXL-24S New Stock
#CM1000DXL-24S Mitsubishi CM1000DXL-24S New Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, #CM1000DXL_24S


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Mitsubishi igbt #CM1000DXL-24S
High power switching use insulated type
Collector current IC……………………………………….900A
Collector-emittr voltage VCES………………………..1200V
Maximum junction tempeerature Tjmax………….175°C
. Flat base Type
. Copper base plate (non-plating)
. Tin plating pin terminals
. RoHS Directive compliant
. DC current rating is limited by power terminals.
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage G-E short-circuited Vces:1200V
Gate-Emitter voltage G-E short-circuited VGES:±20V
Collector current DC,Tc=124°C(Note. 2,4 ) Ic : 25A
Collector current Pulse,Repetitive(Note.3) ICRM  : 2000A
Total power dissipation TC=25 °C(Note. 2,4 ) Ptot :7500W
Isolation between terminal and copper base*2 Viso AC :1 minVisol :2500V
Maximum junction temperature Tjmax 175°C
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5*1 N·m
Weight Typical value 690g

CM1000DXL-24S Video